Akademik Veri Yönetim Sistemi
Uluslararası tarım araştırmalarında yenilikçi yaklaşımlar dergisi (Online), cilt.7, sa.2, ss.220-230, 2023 (Hakemli Dergi)
The salt tolerance level of the radish (Raphanus sativus L.), which has a rich nutritional content, varies depending on the cultivar (cv). In this study, which was carried out using two radish cv. (big red, little red), it was aimed to determine the effect of exogenous silicon dioxide (0.5, 1, 1.5, 2 mM SiO2) applications on germination and vegetative growth parameters under salt stress conditions (150 mM NaCl). After determining the germination percentage (GP), germination index (GI), germination rate coefficient (CVG), mean germination time (MGT) and germination rate index (GRI) for germinating seeds, shoot and root length (mm), leaf width and length (mm), root and shoot fresh weights (g) were measured and seedling vigour index (SVI) was calculated. SiO2 applications had a positive effects on germination parameters in both cultivars under both non-stress and salt stress conditions. While 1.5 mM SiO2 application caused an increase in germination rate in little red cultivar, it was determined that 1 mM application was more effective under salt stress conditions and increased the germination rate by 2 fold (from 24% to 48%). In the big red cv., 2 mM SiO2 application had a positive effect on germination parameters both in salinty and unsalinity conditions. Exogenous SiO2 pre- treatment had also the positive effects on vegetative growth in both cultivars under stressed and unstressed conditions. According to the results of variance analysis, interaction was determined (***p<0.001) between cultivars and applications and all other parameters except root fresh weight. 1.5 mM application dose significantly increased all vegetative growth parameters in little red cultivar under non-stress and salt stress conditions. In the big red cv., a similar effects were obtained as a result of 1 mM SiO2 application.