Temperature dependent PL properties of ASF structures prepared by vapour etching technique

Kabacelik I., Yilmaz M., ULUĞ B.

6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.610 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 899
  • Doi Numarası: 10.1063/1.2733351
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.610
  • Anahtar Kelimeler: ammonium silicon fluoride, vapour etching, luminescence, POROUS SILICON
  • Akdeniz Üniversitesi Adresli: Evet

Özet

Temperature dependent photoluminescence (PL) measurements of (NH4)(2)SiF6 (ASF) structures prepared by the well known vapour etching technique are carried out for temperatures ranging from 10K to 300K. It is observed that PL peak position shifts to higher energies and the intensity is reduced as the temperature decreases.