Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells

YILMAZ M., Sun Y., Balkan N., ULUĞ B., Ulug A., Sopanen M., ...Daha Fazla

MICROELECTRONICS JOURNAL, cilt.40, sa.3, ss.406-409, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 40 Sayı: 3
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.mejo.2008.06.003
  • Dergi Adı: MICROELECTRONICS JOURNAL
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.406-409
  • Anahtar Kelimeler: Photoluminescence, GaInNAs/GaAs QWs, Modulation doping, MOLECULAR-BEAM EPITAXY
  • Akdeniz Üniversitesi Adresli: Evet

Özet

Experimental results concerning the steady-state photoluminescence (PL) studies in n and p modulation doped and undoped GaInNAs/GaAs quantum wells are presented. The effects of modulation, type of doping and nitrogen concentration on the PL and the temperature dependence of the band gap, carrier localization and non-radiative recombination are investigated. Increasing the nitrogen composition decreases energy band gap as expected. The n-type modulation doping eliminates most of the defect-related effects and blue shifts the energy band gap. However, the p-type doping gives rise to additional features in the PL spectra and red shifts energy band gap further compared to the n-type-doped material. (C) 2008 Elsevier Ltd. All rights reserved.